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Silicon carbide (SiC) wafers have emerged as a critical semiconductor material driving the next generation of high-performance electronics. With exceptional thermal stability, wide bandgap properties, and high breakdown electric fields, SiC wafers enable devices to operate reliably under extreme conditions where traditional silicon-based components fail. As a leading player in the semiconductor field, Alfa Chemistry is equipped to provide a wide range of high-quality silicon carbide wafers to meet the stringent requirements of modern semiconductor research and manufacturing.
SiC wafers exhibit a unique combination of electrical, thermal, and physical properties that distinguish them from conventional semiconductor materials. Their wide bandgap enables devices to endure higher electric fields, allowing for thinner drift layers and lower ON-resistance. Additionally, the material's high thermal conductivity ensures rapid heat dissipation, reducing thermal stress and enhancing overall reliability. SiC's superior hardness and chemical stability also allow it to withstand harsh operating environments, including high temperatures and corrosive atmospheres. These advantages drive the adoption of SiC technology in applications requiring uncompromised durability and efficiency.
One of the most significant applications of SiC wafers lies in high-power electronic devices. SiC-based MOSFETs, Schottky diodes, and power modules deliver higher energy efficiency and lower switching losses compared to devices fabricated on silicon substrates. This makes SiC critical for electric vehicles, renewable energy inverters, smart grid technologies, and industrial motor drives.
Beyond power electronics, SiC wafers are increasingly used in radio-frequency (RF) and microwave applications. Their high breakdown voltage and ability to maintain performance at elevated temperatures make SiC suitable for high-power RF amplifiers, radar systems, satellite communications, and 5G base stations. In particular, SiC substrates are widely used to support gallium nitride (GaN) epitaxy, enabling high-frequency, high-power devices with excellent thermal performance.
The available specifications of SiC wafers we can offer are as follows:
| Catalog Number | ACSEM-WS-0001 | ACSEM-WS-0002 | ACSEM-WS-0003 | ACSEM-WS-0004 | ACSEM-WS-0005 |
| Size | 2 inch | 3 inch | 4 inch | 6 inch | 8 inch |
| Diameter | 50.8±0.3 mm | 76.2±0.3 mm | 100±0.5 mm | 150±0.5 mm | 200±0.5 mm |
| Type | 4H-N/HPSI/4H-SEMI, 6H-N/6H-SEMI | 4H-N/HPSI/4H-SEMI | 4H-N/HPSI/4H-SEMI | 4H-N/HPSI/4H-SEMI | 4H-N/HPSI/4H-SEMI |
| Thickness | 330±25 μm, 350±25 μm, or customized | 350±25 μm, 500±25 μm, or customized | 350±25 μm, 500±25 μm, or customized | 350±25 μm, 500±25 μm, or customized | 350±25 μm, 500±25 μm, or customized |
| Roughness | Ra=0.2 nm | Ra=0.2 nm | Ra=0.2 nm | Ra=0.2 nm | Ra=0.2 nm |
| Warp | =30 μm | =30 μm | =30 μm | =30 μm | =45 μm |
| TTV | =10 μm | =10 μm | =10 um | =10 μm | =10 μm |
| Micropipe Density | <1 ea/cm-2 | <1 ea/cm-2 | <1 ea/cm-2 | <1 ea/cm-2 | <1 ea/cm-2 |
| Surface Quality | CMP/MP | ||||
| Grade | Production grade for MOS&SBD; Research grade; Dummy grade; Seed wafer grade | ||||
*In addition to the products listed in the table, we can also customize wafers up to 12 inches for you.
By delivering reliable wafer materials and responsive technical support, Alfa Chemistry empowers customers to accelerate innovation in high-performance semiconductor technologies. If you are seeking trusted SiC wafer solutions or require customized specifications for your projects, our team is ready to assist—contact us to discuss how we can support your semiconductor development needs.
If you do not find the product or would like to request a quote, please contact us.