The etching process used in MEMS manufacturing largely depends on the substrate material and film used to build the device. Different processes may produce the desired effect on the target material, but usually cause accidental damage to the lower layer or other areas of the device.
Due to the sensitivity of the material, customers must carefully determine which type of etching will produce the best results. In some cases, choosing one etching type over another can increase yield and provide cost advantages. For example, KOH or TMAH wet etching can sometimes be used instead of expensive dry etching.
Fig.1 Fabrication of MEMS with different techniques and advantages.
Alfa Chemistry has excellent etching process capabilities in the field of MEMS manufacturing, and we provide our customers with a wealth of solutions.
Our Solution
Alfa Chemistry has a variety of wet and dry etching process options for you to choose from, and will optimize your device manufacturing process to produce high-quality products at competitive prices.
| Dry etching | Silicon |
| Oxide |
| Polyimide |
| Nitride |
| Tantalum Nitride |
| Wafer size from 50 mm to 200 mm |
| Wet etching | Oxide |
| Al-Si |
| Gold |
| Aluminum |
| Chromium |
| Silicon (KOH and TMAH) |
| Wafer size from 50 mm to 200 mm |
| Other | Ion milling (sputter etching) |
| Wafer size from 50 mm to 300 mm |
For more information, please feel free to contact us.
Reference
- Herth. E, et al. (2011). "Optimization of Ohmic Contact and Adhesion on Polysilicon in MEMS–NEMS Wet Etching Process." Microelectronic Engineering. 88(5): 724-728.
