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Lithography lies at the heart of microfabrication, enabling the precise patterning of intricate structures that define the performance of modern microelectromechanical systems (MEMS) and semiconductor devices. As device geometries become increasingly small and design complexity continues to grow, advanced lithography capabilities are essential for achieving superior resolution, high accuracy, and consistent fabrication quality.
Leveraging extensive experience in microfabrication engineering, Alfa Chemistry provides comprehensive lithography services designed to support research institutions, semiconductor companies, and MEMS developers in realizing highly precise micro- and nanoscale structures across a wide range of materials.
Alfa Chemistry offers a robust portfolio of lithography technologies, each tailored to address specific patterning needs. Our services support multiple substrate types—including silicon wafers, glass, sapphire, and flexible materials—ensuring compatibility with diverse MEMS designs and experimental requirements.
Contact lithography is one of the earliest and simplest photolithography techniques, in which a photomask is placed directly on or very close to a photoresist-coated substrate. UV light passes through the mask, transferring the desired pattern onto the resist layer. Its advantages include simplicity, low cost, and fast processing, making it suitable for large-area patterning and applications that do not require extremely fine features.
Alfa Chemistry offers contact lithography with a minimum graphic size of 1 μm and scribing accuracy of ±0.5 μm, ensuring reliable patterning for applications requiring moderate precision.
Stepper lithography, also called projection lithography, employs a sophisticated lens system to project a reduced image of the photomask onto the wafer surface. Unlike contact lithography, the mask does not physically touch the wafer, which minimizes wear and contamination and improves pattern fidelity. Stepper lithography supports higher resolution, precise overlay alignment, and the ability to pattern complex circuit designs repeatedly across a wafer. This method is widely used in semiconductor manufacturing for integrated circuits, advanced logic devices, and high-density memory chips, offering a balance between resolution, throughput, and manufacturing reliability.
Alfa Chemistry's stepper lithography supports a 1:5 projection ratio, a minimum graphic size of 0.35 μm, engraving accuracy ≤0.15 μm (X, Y), and an exposure range <22 × 22 mm, ensuring high precision and reproducibility.
Electron beam lithography (EBL) is a high-precision lithography technique that directly writes patterns on a resist-coated substrate using a focused electron beam. Unlike optical lithography, EBL does not require a photomask, allowing for highly flexible and customizable patterning. This method achieves nanometer-scale feature sizes, making it ideal for fabricating next-generation semiconductor devices, photonic structures, quantum devices, and nanostructures for research purposes.
At Alfa Chemistry, EBL achieves a minimum graphic size of 10 nm with scribing accuracy of 40 nm and an exposure range <100 mm in diameter, supporting cutting-edge nanoscale fabrication.
With contact lithography, stepper lithography, and electron beam lithography platforms, we support patterning from the microscale to the nanoscale, enabling precise fabrication of a wide variety of structures.
We rigorously manage key steps—exposure, development, alignment, baking—to ensure superior resolution, overlay accuracy, and line-edge quality that meet industry-leading standards.
Our team has extensive experience in MEMS and micro-/nanofabrication and can provide guidance on process selection, structural optimization, and troubleshooting to accelerate your development cycle.
Whether for research samples, small-batch prototyping, or fully customized process flows for specific projects, we respond quickly and deliver solutions tailored to your needs.
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