Wafer implantation, also called "ion implantation", is a process that uses elemental ions to change the physical, chemical, or electrical properties of a target. Wafer implantation originated in the 1940s. However, it is most common in the semiconductor industry today. During the wafer implantation process, the ions are accelerated in the electric field to produce a beam emitted at the wafer. Ion implantation allows very precise quantification, which can make the position and depth of the particles on the target wafer more precise.
Alfa Chemistry provides wafer implant services for silicon, silicon-on-insulator (SOI) and other types of specialty substrates such as GaAs, GaN, InP, and more.
Alfa Chemistry is a recognized leader in semiconductor wafer ion implantation. We have a dedicated professional department and expert team to help you at any time. We process unique shapes and wafer sizes ranging from pieces to 300 mm.
Protons | Beryllium | Nitrogen |
Helium | Boron | Oxygen |
Lithium | Carbon | Magnesium |
Aluminum | Phosphorus | Gallium |
Silicon | Argon | Germanium |
Unique and special ion implantation requests are always welcome. Please contact us to see if we can accommodate your requests.
Thanks to the years of research experience, Alfa Chemistry is provided with a complete set of tools that can characterize the implanted wafers. Our analysis equipment include, but are not limited to, the following:
If you do not find the product or would like to request a quote, please contact us.