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Silicon Nitride Films

Silicon nitride is inherently very hard and has excellent mechanical properties, thermal stability, thermal shock resistance and oxidation resistance. In the semiconductor industry, silicon nitride films are often used as dielectric materials, passivation layers or can be used as hard masks. In addition, there are many applications in micromachines, such as film materials. Alfa Chemistry can provide a wide range of silicon nitride films on wafers. Our engineers have many years of experience in developing and optimizing nitride films. Our silicon nitride film process is a mature and stable process you can trust.

Alfa Chemistry's Deposition Technology

Silicon Nitride Films

Available Silicon Nitride Films:

LPCVD Silicon Nitride (SiN) Films

LPCVD SiN films can be easily deposited on silicon wafers in a reproducible, pure and uniform manner. This results in a silicon nitride layer with low electrical conductivity, very good edge coverage and high thermal stability. LPCVD SiN film can be applied to both sides of the wafer.

The LPCVD SiN films provided by Alfa Chemistry are as follows:

① Stoichiometric LPCVD Nitride

Thickness range100 Å - 7500 Å
Wafer size25mm - 300mm
Sides processedBoth
Film stress800MPa Tensile Stress
Temperature700 ℃ - 800 ℃
GasesDichlorosilane, Ammonia

② Low Stress LPCVD Nitride

Thickness range50 Å – 2 µm
Sides processedBoth
Wafer thickness100 µm -2000 µm
Thickness tolerance+/-5 %
Film stress<250 MPa Tensile Stress
Temperature820 ℃
GasesDichlorosilane, Ammonia
Within wafer uniformity+/- 5 % or better
Wafer to wafer uniformity+/- 5 % or better
Refractive index2.20 +/-.02
Wafer size50 mm-300 mm

③ Super Low Stress LPCVD Nitride

Thickness range50 Å – 4 µm
Sides processedBoth
Wafer thickness100 µm -2000 µm
Thickness tolerance+/- 5%
Film stress<100 MPa Tensile Stress
Temperature820 ℃
GasesDichlorosilane, Ammonia
Within wafer uniformity+/- 5 % or better
Wafer to wafer uniformity+/- 5 % or better
Refractive index2.30

④ Targeted Stress LPCVD Nitride

Thickness range50 Å – 4 µm
Sides processedBoth
Wafer thickness100 µm -2000 µm
Thickness tolerance+/- 5%
Film stressYour target +/- 50 MPa Tensile Stress
Temperature800 - 820 ℃
GasesDichlorosilane, Ammonia
Within wafer uniformity+/- 5 % or better
Wafer to wafer uniformity+/- 5 % or better
Refractive index2.05 - 2.35

PECVD Silicon Nitride (SiN) Films

The PECVD SiN layer allows a higher growth rate and therefore results in a thicker layer. Stoichiometry and stress can also be adjusted. The result is high thickness uniformity and etching rate. PECVD SiN wafers are particularly suitable for passivation layers.

Thickness range100 Å – 4 µm
Sides processedOne
Wafer size50 mm - 300 mm
Thickness tolerance+/- 7 %
Film stress<200 MPa (Low Stress), +400 MPa (Standard)
Temperature300 - 400 ℃
GasesAmmonia, Nitrogen
Within wafer uniformity+/- 7 % or better
Wafer to wafer uniformity+/- 7 % or better
Refractive index1.98+/-.05
Wafer thickness100 µm - 2000 µm

PECVD Silicon Oxynitride (SiON)

The PECVD SiON film has fewer hydrogen impurities, better stability, and excellent crack resistance. These characteristics mean that the SiON film can be used as the final passivation layer, intermetal dielectric and liner for trench isolation.

Sides processedOne
Wafer size50 mm - 300 mm
Film stress250 MPa
Temperature400 ℃
Refractive index1.5 - 1.9
Wafer thickness100 Å - 2 μm

How to order?

How to order

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