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Silicon nitride is inherently very hard and has excellent mechanical properties, thermal stability, thermal shock resistance and oxidation resistance. In the semiconductor industry, silicon nitride films are often used as dielectric materials, passivation layers or can be used as hard masks. In addition, there are many applications in micromachines, such as film materials. Alfa Chemistry can provide a wide range of silicon nitride films on wafers. Our engineers have many years of experience in developing and optimizing nitride films. Our silicon nitride film process is a mature and stable process you can trust.
LPCVD Silicon Nitride (SiN) Films
LPCVD SiN films can be easily deposited on silicon wafers in a reproducible, pure and uniform manner. This results in a silicon nitride layer with low electrical conductivity, very good edge coverage and high thermal stability. LPCVD SiN film can be applied to both sides of the wafer.
The LPCVD SiN films provided by Alfa Chemistry are as follows:
① Stoichiometric LPCVD Nitride
| Thickness range | 100 Å - 7500 Å |
| Wafer size | 25mm - 300mm |
| Sides processed | Both |
| Film stress | 800MPa Tensile Stress |
| Temperature | 700 ℃ - 800 ℃ |
| Gases | Dichlorosilane, Ammonia |
② Low Stress LPCVD Nitride
| Thickness range | 50 Å – 2 µm |
| Sides processed | Both |
| Wafer thickness | 100 µm -2000 µm |
| Thickness tolerance | +/-5 % |
| Film stress | <250 MPa Tensile Stress |
| Temperature | 820 ℃ |
| Gases | Dichlorosilane, Ammonia |
| Within wafer uniformity | +/- 5 % or better |
| Wafer to wafer uniformity | +/- 5 % or better |
| Refractive index | 2.20 +/-.02 |
| Wafer size | 50 mm-300 mm |
③ Super Low Stress LPCVD Nitride
| Thickness range | 50 Å – 4 µm |
| Sides processed | Both |
| Wafer thickness | 100 µm -2000 µm |
| Thickness tolerance | +/- 5% |
| Film stress | <100 MPa Tensile Stress |
| Temperature | 820 ℃ |
| Gases | Dichlorosilane, Ammonia |
| Within wafer uniformity | +/- 5 % or better |
| Wafer to wafer uniformity | +/- 5 % or better |
| Refractive index | 2.30 |
④ Targeted Stress LPCVD Nitride
| Thickness range | 50 Å – 4 µm |
| Sides processed | Both |
| Wafer thickness | 100 µm -2000 µm |
| Thickness tolerance | +/- 5% |
| Film stress | Your target +/- 50 MPa Tensile Stress |
| Temperature | 800 - 820 ℃ |
| Gases | Dichlorosilane, Ammonia |
| Within wafer uniformity | +/- 5 % or better |
| Wafer to wafer uniformity | +/- 5 % or better |
| Refractive index | 2.05 - 2.35 |
PECVD Silicon Nitride (SiN) Films
The PECVD SiN layer allows a higher growth rate and therefore results in a thicker layer. Stoichiometry and stress can also be adjusted. The result is high thickness uniformity and etching rate. PECVD SiN wafers are particularly suitable for passivation layers.
| Thickness range | 100 Å – 4 µm |
| Sides processed | One |
| Wafer size | 50 mm - 300 mm |
| Thickness tolerance | +/- 7 % |
| Film stress | <200 MPa (Low Stress), +400 MPa (Standard) |
| Temperature | 300 - 400 ℃ |
| Gases | Ammonia, Nitrogen |
| Within wafer uniformity | +/- 7 % or better |
| Wafer to wafer uniformity | +/- 7 % or better |
| Refractive index | 1.98+/-.05 |
| Wafer thickness | 100 µm - 2000 µm |
PECVD Silicon Oxynitride (SiON)
The PECVD SiON film has fewer hydrogen impurities, better stability, and excellent crack resistance. These characteristics mean that the SiON film can be used as the final passivation layer, intermetal dielectric and liner for trench isolation.
| Sides processed | One |
| Wafer size | 50 mm - 300 mm |
| Film stress | 250 MPa |
| Temperature | 400 ℃ |
| Refractive index | 1.5 - 1.9 |
| Wafer thickness | 100 Å - 2 μm |
If you do not find the product or would like to request a quote, please contact us.
