Silicon Wafers

Yes! For customers who need bare silicon wafers or thin-film silicon wafers, we can help reduce cycle time and transportation costs. If you need thin films on wafers made of non-silicon materials, please contact us directly.

For items in stock, Alfa Chemistry will ship them within 24 hours. For back ordered items, the delivery time may vary. For more information, see the delivery time on the product page.

Yes! With the development of high-tech industries and new technologies, Alfa Chemistry understands that the demand for non-silicon wafer processing continues to grow. The use of non-silicon substrates can improve the efficiency of many applications. In some cases, unique shapes and sizes may be required.

Alfa Chemistry can also help meet customers' special wafer requirements. We have experience in many other types of materials, including sapphire wafers, glass wafers, and quartz wafers.

• Wafer diameter: 50mm, 100mm, 125mm, 150mm, 200mm and 300mm
• Wafer grade: prime, test
• Wafer type: P-type, N-type, intrinsic
• Dopants: boron, phosphorus, antimony, arsenic
• Orientation:<1-0-0>,<1-1-0>,<1-1-1>
• Wafer thickness: semi-standard, customized
• Backside surface: etched, polished
• Wafer resistivity: all resistivity ranges
• Wafer TTV: can be specified
• Bow/Warp: can be specified

Alfa Chemistry's experts recommend a simple and straightforward three-step method to ensure that you clean silicon wafers effectively.

Solvent cleaning: Two solvents are usually used, acetone and methanol. This process usually involves the preparation of two baths. The acetone bath is heated to about 55 degrees Celsius, and then the wafer is immersed in it for 10 minutes. After that, the wafer can be removed and placed in a methanol bath for about 5 minutes. Then rinse it with deionized water and dry with nitrogen.

RCA-1 cleaning: RCA oxidizes the wafer and forms a thin oxide layer on the surface. The RCA bath can be prepared by mixing 1 part ammonium hydroxide (27%) with 5 parts deionized water. The mixture is heated to 70 degrees Celsius and mixed with 1 part of hydrogen peroxide (30%), and then the silicon wafer is immersed in it. After 15 minutes, take it out and immerse it in a bath filled with deionized water for rinsing. Change the water regularly until it is rinsed properly.

Hydrofluoric acid dip: The last step involves HF dip to remove the silicon oxide layer. The infusion is prepared by mixing 20 ml of acid with 480 ml of water. Soak the silicon wafer for 2 minutes, and then rinse it in running deionized water.