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Annealing

Annealing

Silicon wafer annealing can reduce the stress in the silicon, activate or move dopants, densify the deposited or grown film, and repair the damage in the implanted wafer processing. It can also modify the film-to-film or film-to-substrate interface for wafers with multiple films, bonded wafers, and SOI applications. Due to its wide use, wafer annealing can take anywhere from a few minutes to more than a day. For example, in rapid thermal processing/annealing applications, in order to make thin films or bonded wafers dense, the wafers can be placed in a furnace for more than one day.

Alfa Chemistry provides annealing solutions for wafers from 25 mm to 300 mm in diameter. We provide customers with many standard annealing recipes, or we can provide customized annealing services according to your specific requirements.

Alfa Chemistry's Annealing Specifications

Wafer thickness100 µm - 2000 µm
Wafer size50 mm, 100 mm, 125 mm, 150 mm, 200 mm
Wafer materialSilicon, Silicon on Insulator, Quartz
Sides processedBoth
Temperature1100 - 1300 ℃, 1000 - 1500 K
Wafer to wafer uniformity+/- 7% or better
GasesNitrogen, Hydrogen

If you have other technical requirements or questions, please contact us. We are happy to discuss and communicate with you.

Alfa Chemistry's Wafer Annealing Methods

Nitrogen Annealing

Pure nitrogen flows through the chamber containing the wafer. After the chamber is filled with nitrogen, the system is heated to 1100 - 1300 ℃ for 4 hours. The use of pure nitrogen prevents any harmful oxide growth on the wafer surface during the annealing process.

Forming Gas Annealing

This process is the same as nitrogen annealing. The forming gas annealing uses a mixture of 90 % - 96 % nitrogen and 4 % - 10 % hydrogen instead of pure nitrogen. This mixed gas is obtained by thermally cracking ammonia. The use of ammonia allows more precise control of the hydrogen concentration in the forming gas.

Rapid Thermal Annealing

This process involves heating a single wafer at a time to affect its electrical properties. Heat the wafer quickly from ambient temperature to about 1000 - 1500 K. After the wafer reaches this temperature, it will be held for a few seconds and then quenched.

Rapid Thermal Annealing

Annealing Applications

Silicon wafer annealing is used for the following purposes:

  • Activate dopants
  • Bonded wafers
  • Change film-to-film or film-to-wafer substrate interfaces
  • Densify deposited films
  • Change states of grown films
  • Repair damage from ion implantation
  • Move dopants or drive dopants from one film into another or from a film into the wafer substrate

Let us know how we can help you with your wafer annealing needs.

Our products and services are for research use only and cannot be used for any clinical purpose.

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