Epitaxial Wafer Service

Epitaxy is the process of growing a structure on top of another crystal layer or substrate in a specific crystal direction, where the direction is determined by the underlying crystal. Epitaxy can be used on bare wafers or wafers with buried layers, patterns or advanced device structures. It is the first step in manufacturing key components in a variety of equipment from mobile phones to solar cells and LEDs. Alfa Chemistry has decades of R&D experience in compound semiconductor epitaxial crystal growth and optical and electronic device design and characterization.

With a broad technical foundation and commercial-scale equipment for the growth, processing and/or characterization of compound semiconductor materials, we can provide small-volume epitaxy services for companies that do not require large-scale production. All products provided by Alfa Chemistry for epitaxial wafer services are high-quality sealing products. Interested to learn more about our services? Contact us now.

What Alfa Chemistry Offers?

• Low-cost, rapid prototyping of small scale semiconductor wafer epitaxial service for researchers from universities or companies.
• A fee-for-service model for the growth, processing or characterization of epitaxial semiconductor wafers.
• Additional customer and/or research support services are available for standard and or customized growth of epitaxial wafer.

SVM's Epitaxial Wafer Service Specifications

• Wafer diameter: 100 mm, 125 mm, 150 mm, 200 mm and 300 mm*
• EPI thickness: 1 µm to 150 µm
• Wafer direction: <100>,<111>,<110>
• Dopants: arsenic, phosphorus, boron
• Typical resistivity range:
  0.01 - 1200 ohm-cm; 3000 - 5000 ohm-cm (intrinsic layer)

*The 300 mm extension is only suitable for selective requirements.
If you have other requirements, please contact us for more details.

Our Specialty Products

• Si / SiGe epitaxy
• Selective epitaxial growth
• SOI wafer epitaxial solution
• Silicon carbide epitaxial solutions
• Single, dual, and triple layer epitaxial solutions

Our Specialty Products

For epitaxial layer deposition, it is important to determine which type of EPI layer is required for the application and then how to deposit it. Depending on the type of EPI layer, Alfa Chemistry uses 3 different methods for deposition.

Liquid Phase Epitaxy (LPE)

LPE is very common in the manufacture of compound semiconductor devices, and heteroepitaxial films are usually deposited.

Molecular Beam Epitaxy (MBE)

MBE is a thin film deposition method in which epitaxial layers can be printed on a substrate one atomic layer at a time. It is more popular in very thin film applications.

Vapour Phase Epitaxy (VPE)

VPE uses silane (SiH₄) and propane (C₃H₈) as precursor gases for chemical vapor deposition to form heterogeneous structures on the substrate. It is specially developed for depositing silicon layer on GaAs wafers using metal organic chemical vapor deposition method.