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Gallium Arsenide Wafers

Gallium arsenide (GaAs) wafers serve as critical semiconductor substrates in a wide range of high-performance electronic and optoelectronic applications. Their direct bandgap and high electron mobility allow devices to achieve rapid signal processing, operate at elevated frequencies, and deliver strong optical emission efficiency. As technology trends accelerate toward higher speed, lower power consumption, and greater integration density, GaAs wafers continue to gain prominence, enabling significant progress in fields such as telecommunications, aerospace systems, photonic devices, and precision sensing technologies.

Material Characteristics and Advantages

GaAs offers a unique combination of electrical and optical properties that set it apart from conventional silicon substrates. Its direct bandgap allows efficient photon generation and absorption, which is why it is a preferred material for LEDs, laser diodes, and solar cells used in demanding environments. In addition, GaAs exhibits higher electron mobility and saturation velocity, supporting the development of high-frequency and high-power devices such as radio frequency (RF) amplifiers and microwave circuits. Finally, the material's inherent resistance to radiation damage further enhances its value, particularly in space and military applications where reliability is critical. These advantages collectively position GaAs as a superior platform for high-performance device fabrication.

Key Applications

GaAs wafers play a central role in modern optoelectronics and high-speed signaling technologies, supporting a wide range of advanced applications, including:

  • Telecommunications and RF Systems

GaAs-based HEMTs and pHEMTs are widely used in 5G base stations, satellite communication systems, radar modules, and other high-frequency devices due to their excellent gain, low noise performance, and high operating frequency.

  • Optoelectronic Devices

GaAs wafers serve as key substrates for fabricating VCSELs, infrared detectors, quantum well lasers, and high-efficiency LEDs, enabling applications in data centers, LiDAR, medical diagnostics, and high-speed optical communication.

  • High-Efficiency Solar Cells

GaAs solar cells deliver exceptional power conversion efficiency and strong radiation resistance, making them the preferred choice for aerospace power systems, satellites, and high-altitude platforms.

Our Products

The available specifications of GaAs wafers we can offer are as follows:

Catalog NumberACSEM-WS-0032ACSEM-WS-0033ACSEM-WS-0034ACSEM-WS-0035
Conductivity TypeSemi-InsulatedP-Type/ZnN-Type/SiN-Type/Si
ApplicationMicro ElectronicLEDLaser Diode
Crystal Growth MethodsVGF
Diameter2", 3", 4", 6"
Orientation(100)±0.5°
Thickness350-625 μm±25 μm
OF/IFUS EJ or Notch
Carrier Concentration-(0.5-5)*1019 cm-3(0.4-4)*1018 cm-3(0.4-0.25)*1018 cm-3
Resistivity>107 Ω·cm(1.2-9.9)*10-3 Ω·cm(1.2-9.9)*10-3 Ω·cm(1.2-9.9)*10-3 Ω·cm
Electron Mobility>4000 cm2/v·s50-120 cm2/v·s>1000 cm2/v·s>1500 cm2/v·s
Etch Pitch Density<5000 cm-2<5000 cm-2<5000 cm-2<500 cm-2
TTV [P/P]<5 μm
TTV [P/E]<10 μm
Warp<10 μm
Surface FinishedP/P, P/E, E/E

* If the specifications you need are not available in the table, we can also offer customized services for you.


Alfa Chemistry has the capability to provide high-quality wafer products. Whether you require semi-insulating substrates for RF components or conductive wafers for epitaxial growth, we provide tailored solutions to support innovation in advanced electronics and photonics. Contact us today to explore the full range of GaAs wafers and obtain materials optimized for your specific project requirements.

Our products and services are for research use only and cannot be used for any clinical purpose.

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