The yield rate is the lifeline of the semiconductor industry. From semiconductor materials, integrated circuit design, silicon wafer production, circuit manufacturing to packaging and testing, impurity contamination introduced by each process may cause semiconductor device defects.
Alfa Chemistry provides reliable material analysis solutions for the entire semiconductor manufacturing process, thereby helping to improve the overall product yield.
The semiconductor industry generally requires the purity of silicon wafers to be above 99.9999999%. Accurate detection of impurities in semiconductor manufacturing materials is essential to ensure the quality and yield of components. As modern semiconductor components become smaller and smaller, the potential negative impact of impurities on component speed and profit is also increasing.
Alfa Chemistry is equipped with high detection sensitivity and powerful interference removal ability detection equipment, such as high-resolution ICP-MS technology, which can complete ultra-trace amounts of silicon wafer surfaces, monocrystalline silicon ingots, and wafers elemental analysis to reliably control wafer quality.
Fig 1. The detection images of VPD samples by quadrupole ICP-MS (a) and high-resolution ICP-MS (b-e). (Ferrero E. J, et al. 2002)
We process the sample by gas-phase decomposition or droplet etching and then analyze the element content of the obtained sample solution. Due to the interference of Si-based samples, quadrupole ICP-MS is difficult to determine trace amounts of phosphorus, but it can be easily done in the resolution mode of high-resolution ICPMS. Through vapor phase decomposition high-resolution inductively coupled plasma mass spectrometry (VPD-HR-ICPMS), we can achieve a quantitative analysis of 42 elements in wafer samples.
A variety of high-resolution optical/electron/ion microscopes and specific spectrometers / diffractometers are used to control the process flow and analyze the physical structure of semiconductor wafers. Alfa Chemistry has a variety of electron and ion microscopes and other analytical instruments, which can provide customers with wafer analysis at different stages of the industry cycle.
The following is a list of our physical property analysis technology for semiconductor wafers.
|Optical, electron and ion microscope||Spectrometer and diffractometer|
|Optical microscope||Auger electron spectroscopy|
|Transmission Electron Microscope||X-ray photoelectron spectroscopy|
|Scanning electron microscope||Raman spectroscopy|
|Focused ion beam||Secondary ion mass spectrometry|
|X-ray diffraction spectroscopy|
|X-ray fluorescence spectroscopy|
The following is an overview of our physical and chemical analysis in semiconductor device manufacturing. Our analysis methods include, but are not limited to the following.
|Analysis type||Analytical technology||Analysis requirements|
|Device size||Atomic force microscope||Spatial resolution, lossless|
|Transmission electron microscope||Spatial resolution, contrast, lossless|
|Chemical composition doping distribution||X-ray photoelectron spectroscopy||Surface analysis, lateral and depth resolution, chemical sensitivity|
|Scanning electron microscope-energy spectrometer||Full analysis, lateral and depth resolution, chemical sensitivity|
|Atom probe tomography||3D analysis, spatial resolution|
|Chemical pollution||Secondary ion mass spectrometer||Chemical sensitivity, spatial resolution, repeatability|
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