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Indium phosphide (InP) wafers are high-performance III-V semiconductor substrates, notable for their direct bandgap, excellent electron mobility, and unique ability to support monolithic photonic integration. Unlike conventional materials, InP enables the combination of all essential photonic components—lasers, modulators, detectors, and waveguides—on a single chip, making fully integrated photonic circuits possible. With the increasing demand for ultra-high-speed data transmission and next-generation photonic technologies, InP wafers have become a critical material driving innovation in next-generation communication and sensing technologies.
What sets InP apart is its ability to support both high-speed electronic transport and efficient optical emission at key fiber-optic communication wavelengths—1.3 μm and 1.55 μm. Because these wavelengths coincide with the low-loss transmission window of silica optical fibers, InP is especially well suited for long-distance and high-capacity data communication systems. Furthermore, InP's high electron mobility and saturation velocity enable superior performance in millimeter-wave and terahertz devices. Its lattice structure also allows it to serve as an ideal substrate for indium gallium arsenide (InGaAs) and indium gallium arsenide phosphide (InGaAsP) epitaxial layers, which are essential for high-sensitivity photodetectors and advanced heterostructures.
InP wafers support several applications that cannot be achieved as effectively with other semiconductor materials. The most significant application is photonic integrated circuits, where InP can integrate both active and passive optical components directly on the same chip, whereas silicon photonics requires additional bonding steps to achieve this. In fiber-optic communication, InP is the only mature material platform capable of producing commercial-grade distributed feedback (DFB) lasers, electro-absorption modulators (EAMs), and avalanche photodiodes (APDs). In addition, InP also plays a critical role in quantum photonics, mid-infrared sensing, and ultra-fast coherent communication, where its broad transparency range and nonlinear optical properties outperform GaAs- and Si-based materials.
The available specifications of InP wafers we can offer are as follows:
| Catalog Number | ACSEM-WS-0036 | ACSEM-WS-0037 | ACSEM-WS-0038 |
| Conductivity Type | Semi-Insulated | N-Type | P-Type |
| Dopant | Fe | S, Sn | Zn |
| Crystal Growth Methods | VGF | ||
| Diameter | 2", 3", 4", 6" | ||
| Orientation | (100)±0.5° | ||
| Thickness | 350-675 μm ±25 μm | ||
| OF/IF | US EJ | ||
| Carrier Concentration | - | (0.8-8)*1018 cm-3 | (0.8-8)*1018 cm-3 |
| Resistivity | >0.5*107 Ω·cm | - | - |
| Electron Mobility | >1000 cm2/v·s | 1000-2500 cm2/v·s | 50-100 cm2/v·s |
| Etch Pitch Density | <5000 cm-2 | <5000 cm-2 | <500 cm-2 |
| TTV [P/P] | <10 μm | ||
| TTV [P/E] | <15 μm | ||
| Warp | <15 μm | ||
| Surface Finished | P/P, P/E, E/E | ||
* If the specifications you need are not available in the table, we can also offer customized services for you.
Our product portfolio spans a wide range of conductivity types, doping types, diameters, and thicknesses, enabling us to support the diverse technical needs of integrated photonic circuits, laser diodes, high-frequency components, and advanced optoelectronic systems. Each wafer is produced under rigorous quality control to ensure exceptional surface flatness, uniformity, and crystal integrity, providing reliable performance for both research applications and volume manufacturing. Customized specifications are also available to help customers obtain InP wafer solutions precisely aligned with their project requirements. We welcome you to contact us and explore how we can support your next innovation.
If you do not find the product or would like to request a quote, please contact us.