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Composite wafers are advanced semiconductor substrates composed of two or more materials combined to optimize mechanical, thermal, or electrical properties. By integrating layers with complementary characteristics, these wafers offer enhanced performance for applications that require high thermal conductivity, excellent electrical insulation, or improved mechanical strength. Commonly used in high-power electronics, radio-frequency (RF) devices, and optoelectronic components, composite wafers enable more reliable, efficient, and compact device designs. Alfa Chemistry provides high-quality composite wafers with customizable specifications to meet the diverse requirements of research and industrial applications.
Composite wafers have become essential components across a broad range of high-tech applications. In power electronics, they help support efficient energy conversion in electric vehicles, renewable energy systems, and industrial power modules. In RF and microwave technologies, composite substrates enable low-loss, high-frequency performance required for 5G base stations, satellite communications, and radar systems. Their value in optoelectronics is equally significant, providing stable platforms for lasers, photodetectors, integrated photonic circuits, and high-brightness LEDs. As device architectures continue to advance toward higher integration and multifunctionality, composite wafers will become increasingly important.
The composite wafers we can provide are as follows:
N-type SiC Composite Wafer
Semi-insulating SiC Composite Wafer
N-type SiC on Si Composite Wafer
Semi-insulating SiC on Si Composite Wafer
Si on SiC Composite Wafer
Si on AlN Composite Wafer
| N-type SiC Composite Wafer Catalog: ACSEM-WS-0042 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | Front (Si-face) Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) |
| Type | 4H | Edge Chip, Scratch, Crack | None |
| Resistivity | 0.015–0.025 Ω·cm | TTV | ≤3 μm |
| Transfer Layer Thickness | ≥0.4 μm | Warp | ≤35 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) | Thickness | 350 ± 25 μm |
| Semi-insulating SiC Composite Wafer Catalog: ACSEM-WS-0043 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | Front (Si-face) Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) |
| Type | 4H | Edge Chip, Scratch, Crack | None |
| Resistivity | 0.015–0.025 Ω·cm | TTV | ≤3 μm |
| Transfer Layer Thickness | ≥0.4 μm | Warp | ≤35 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) | Thickness | 500 ± 25 μm |
| N-type SiC on Si Composite Wafer Catalog: ACSEM-WS-0044 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | Si Orientation | <111>/<100>/<110> |
| SiC Type | 4H | Si Type | P/N |
| SiC Resistivity | 0.015–0.025 Ω·cm | Flat Length | 47.5 ± 1.5 mm |
| Transfer SiC Layer Thickness | ≥0.1 μm | Edge Chip, Scratch, Crack | None |
| Void | ≤5 ea/wafer (2 mm < D < 0.5 mm) | TTV | ≤5 μm |
| Front Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) | Thickness | 500/625/675 ± 25 μm |
| Semi-insulating SiC on Si Composite Wafer Catalog: ACSEM-WS-0045 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | Si Orientation | <111>/<100>/<110> |
| SiC Polytype | 4H | Si Type | P/N |
| SiC Resistivity | ≥1E8 Ω·cm | Flat/Notch | Flat/Notch |
| Transfer SiC Layer Thickness | ≥0.1 μm | Edge Chip, Scratch, Crack | None |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) | TTV | ≤5 μm |
| Front Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) | Thickness | 350/500 ± 25 μm |
| Si on SiC Composite Wafer Catalog: ACSEM-WS-0046 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | SiC Type | 4H |
| Si Orientation | <111>/<100>/<110> | SiC Resistivity | 0.015-0.025/≥1E8 Ω·cm |
| Si Type | P/N | Flat/Notch | Flat/Notch |
| Transfer Si Layer Thickness | ≥0.1 μm | Edge Chip, Scratch, Crack | None |
| Void | ≤5 ea / wafer (2 mm > D > 0.5 mm) | TTV | ≤5 μm |
| Front Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) | Thickness | 350/500 ± 25 μm |
| Si on AlN Composite Wafer Catalog: ACSEM-WS-0047 | |||
| Item | Specification | Item | Specification |
| Diameter | 150 ± 0.2 mm | AlN Resistivity | ≥1E8 Ω·cm |
| Si Orientation | <111>/<100>/<110> | AlN Thermal Conductivity | ≥180 W/m·K |
| Si Type | P/N | Flat Length | 47.5 ± 1.5 mm |
| Transfer Si Layer Thickness | ≥0.1 μm | TTV | ≤5 μm |
| Edge Chip, Scratch, Crack | None | Thickness | 625 ± 25 μm |
| Front Roughness | Ra ≤ 0.2 nm (5 μm x 5 μm) | ||
Alfa Chemistry is fully equipped to supply a comprehensive range of high-quality composite wafers tailored to diverse research and industrial needs. We welcome customers to contact us for product inquiries, technical support, and customized solutions.
If you do not find the product or would like to request a quote, please contact us.