The photomask contains a pattern of integrated circuits. And as transistors become smaller and smaller, photomasks become more and more complex to accurately transfer patterns onto silicon wafers. The process of creating photomasks has accordingly become more advanced-even minor defects in the photomask can affect the performance of silicon devices.
It is essential to ensure accuracy and defect-free photomask patterns, especially in the case of high-revenue earning chips. Alfa Chemistry provides a complete pattern imaging service to meet the various needs of customers.
Alfa Chemistry offers a complete range of pattern imaging services. These services include electron beam, laser writing, pattern generation, stepping and repeating, and Gerber photographic drawing. Among them, we typically use pattern generation to produce non-repeating imagery.
Alfa Chemistry strives to select a process to provide our customers with the best results at the lowest cost. The selection of the appropriate method depends on many factors, including: mask resolution, chip size, image placement accuracy, etc.
Electron beam lithography (EBL) technology has very prominent advantages in constructing extremely small structures. When the customer needs the highest possible accuracy, the electron beam can provide the best results, controlling the CD as low as 10.2 pm. Electron beam imaging is also the most expensive.
This is the latest technology used to manufacture masks. It can provide accuracy close to the electron beam, and its cost is second only to the electron beam.
When customers need high-precision optical imaging to generate 1X or greater magnification, pattern generation is an excellent choice. Its features include a high resolution of 3 microns and an image placement accuracy of usually 0.15 microns.
Optical Step and Repeat
When a precision array of high resolution images is required, step and repeat cameras are ideal for accuracy and low cost.
We use automated laser imaging technology to create features as small as 25 microns on the film. The image placement accuracy is as high as 0.15 microns. Photolithography is mainly used to produce artwork larger than the final size. This artwork after the camera is reduced to achieve maximum precision, so as to create a mask on the glass.
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