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Etching Effect Evaluation

To evaluate the etching effect, many critical indicators need to test and analyze after the etching process is completed, such as etching uniformity, etching bias, etching profile, etching residue, etc. Alfa chemistry has the ability to evaluate these indicators to ensure the etching effect.

Alfa Chemistry has advanced analytical instrument, high-skilled testing team and rich testing experience. We offer advanced research methods and comprehensive analysis expertise to help you evaluate and improve the etching process.

Our Evaluation Scope

Alfa Chemistry has the ability to judge the etching effect by evaluating different etching indicators. The etching indicators we can evaluate include but are not limited to the following.

  • Etching uniformity
    Etching uniformity is a parameter that measures the etching capacity of an etch process on an entire thin film layer, or an entire batch, or between batches.
  • Etching bias
    Etching bias is the difference between post development critical dimensions (CD) and the post etch CD.
  • Etching profile
    Etching profile refers to the side wall shape of the etched figure. There are two basic etching profiles, which are isotropic and anisotropic etching profiles.
  • Etching residue
    Etching residue is the impurity that remains on the surface of thin films after etching process.

Our Analytical Instruments

Alfa Chemistry has professional analytical instruments, including but not limited to the following.

  • Scanning electron microscope

Scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons. The electrons interact with atoms in the sample, producing various signals that contain information about the surface topography and composition of the sample. SEM can detect the topography, thickness and CD of etching film layers.

Scanning electron microscope
  • Focused ion beam

Focused ion beam (FIB) is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. FIB can test etching profile in etching process.

Focused ion beam
  • Energy-dispersive X-ray spectroscopy

Energy-dispersive X-ray spectroscopy (EDX) is an technique used for the elemental analysis or chemical characterization of a sample. It relies on an interaction of some source of X-ray excitation and a sample. EDX analyzes etching residue by detecting chemical elements.

Energy-dispersive X-ray spectroscopy

Our Advantages

Focused ion beam

  • We have highly skilled testing and analysis teams.
  • We output accurate data and industry-recognized test reports.
  • We have professional analytical instruments and standard testing procedures.

Our Order Process

Our Order Process

  • Handling your enquiry: All working relationships begin with an initial message or call, to let us know about your difficulties with etching effect evaluation.
  • Processing your order: Once we have agreed costings and timescales, our team will propose etching effect evaluation solutions and finish the evaluation as soon as possible after your confirmation.
  • Shipping your order: A complete etching effect evaluation report will be finished and ship to you in the shortest possible time.
  • Payment and aftercare: We have a dedicated sales team who will be in touch regarding invoicing and payment. Should you have queries, we can help.

Why Choose Us?

Alfa Chemistry is a global leader in testing and analysis. We offer the advanced analytical instruments and reliable analysis report to help customer evaluate the etching effect. If you have any questions about the etching, please contact us. We look forward to maintaining a harmonious, long-term and win-win cooperative relationship with you.

Our products and services are for research use only and cannot be used for any clinical purpose.

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