Atomic layer deposition (ALD) is a special CVD that can be deposited at the atomic level. It can form very smooth, uniform thickness, highly dense, and alternating layers of different materials with minimal defects. CVD / ALD processes are highly attractive, through which thin films that meet specifications and are uniform and with precise thickness control can be grown.
CVD is suitable for manufacturing optical storage media and manufacturing semiconductor devices. With more precise control of film formation, ALD is becoming more and more attractive for depositing thin films through microelectronic device applications, such as ferroelectric memory, integrated circuits, MEMS, thin-film capacitors, and new high-k gate dielectrics. They are also essential for advancing the technology of electroluminescent devices.
Fig 1. Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells. (Raiford J. A, et al. 2020)
Process conditions have a great influence on the properties of ALD/CVD materials, and the correct selection of precursors is very important to obtain the required materials. Initially, CVD precursors included metal hydrides and halides, but nowadays a large number of metal-organic compounds are used.
Alfa Chemistry provides you with high-quality purified precursors for semiconductor and thin-film research and development. Our product selection is classified into atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors according to their main applications. Use the link below to find the product you need. We look forward to your contact!
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