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Photoresist

A photoresist is a photosensitive resin used to transfer circuit patterns (such as semiconductor patterns) on a silicon wafer in a photolithography process. Alfa Chemistry has a long history of patterning wafers and etching research. Alfa Chemistry has the ability to provide photoresist solutions for patterning and etching on wafers, and can handle CMOS, MEMS, TSV, FEOL, BEOL and other related projects. Our project design rules dictate specific photoresist types/performance. Alfa Chemistry provides a complete list of photoresist products suitable for many applications.

If you have questions about a specific product, please contact us.

Alfa Chemistry's Available Photoresists

Alfa Chemistry's semiconductor photoresist includes G-line photoresist, I-line photoresist, KrF photoresist and ArF photoresist.

  • I-Line photoresist is a more general resist film, which is sensitive to 365nm in the ultraviolet spectrum. The film can precisely control exposure, and is very suitable for MEMS and wafer-level packaging processes.
  • For more advanced lithography applications, Alfa Chemistry offers DUV 248 nm KrF and 193 nm ArF photoresist products, which can be used with or without anti-reflective coating.
  • Alfa Chemistry also has thick photoresist and polyimide up to hundreds of microns, which are commonly used in MEMS and WLP applications.

Alfa Chemistry's Coating Methods

The purpose of the photoresist coating process is to create a thin, uniform and defect-free photoresist film on the wafer surface. We use the following coating technologies:

Static Rotation Method

The photoresist is piled up in the center of the silicon wafer through the glue drop head, and then rotated at a low speed to spread the photoresist, and then rotated at a high speed to shake off the excess photoresist. In the process of high-speed rotation, the solvent in the photoresist will volatilize part of it.

Dynamic Rotation Method

Dynamic gluing is suitable for large wafers. When the photoresist casts the silicon wafer, it starts to rotate at a low speed to help the photoresist to carry out the initial diffusion. This method can use a smaller amount of photoresist to form a more uniform spread of photoresist, and finally form a photoresist film that meets the requirements of thickness and uniformity with high-speed rotation.

PhotoresistFigure 1. (a) Gluing process of static rotation method; (b) Gluing process of dynamic spraying method.

Photoresist Spraying Method

MEMS devices usually have high aspect ratio features, so it is difficult to achieve complete photoresist coverage by standard spin coating methods. Alfa Chemistry's photoresist spraying technology is an excellent alternative to spin coating. It can coat topography ranging from a few microns to hundreds of microns, making it an ideal choice for manufacturing 3D functions, such as V-grooves and deep grooves.

Spray Coat Unique Features:

  • Enable the technology of patterning on severe terrain.
  • It has a conformal coating covering the top edge, while avoiding the accumulation of resist in the trench.

Photoresist Patterning Process

Choose Photoresist

Our products and services are for research use only and cannot be used for any clinical purpose.

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