TSPO1

Description	TSPO1 is an electon transfer layer (ETL) or hole blocking layer (HBL) in OLED devices.
IUPAC Name	(4-diphenylphosphorylphenyl)-triphenylsilane
Molecular Weight	536.67
Molecular Formula	C36H29OPSi
Canonical SMILES	C1=CC=C(C=C1)[Si](C2=CC=CC=C2)(C3=CC=CC=C3)C4=CC=C(C=C4)P(=O)(C5=CC=CC=C5)C6=CC=CC=C6
InChI	InChI=1S/C36H29OPSi/c37-38(30-16-6-1-7-17-30,31-18-8-2-9-19-31)32-26-28-36(29-27-32)39(33-20-10-3-11-21-33,34-22-12-4-13-23-34)35-24-14-5-15-25-35/h1-29H
InChI Key	TXBFHHYSJNVGBX-UHFFFAOYSA-N
Boiling Point	236 °C
Melting Point	661.0 ± 51.0 °C
Purity	95%+
Appearance	Solid
Application	TSPO1 is a phosphine oxide-based blocking and host material with triplet energy excitons. It is mainly used in the formation of a blocking layer that enhances the performance of organic electronic devices like organic light-emitting diodes (OLEDs), and delayed fluorescent devices.
Storage	room temp
Form	solid
Quality Level	100