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Description | Band gap: 1.87 eV |
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Molecular Weight | average Mw 10000-50000 |
Molecular Formula | (C43H46N2S3)n |
Storage | room temp |
Form | ITO/PEDOT:PSS/PFO-DPT:PC61BM (1:2)/Ba/Al[1]• Short-circuit current density (Jsc): 5.18 mA/cm2 • Open-circuit voltage (Voc): 0.95 V• Fill Factor (FF): 0.35• Power Conversion Efficiency (PCE): 2.24 % |
OPV Device Performance | ITO/PEDOT:PSS/PFO-DPT:PC61BM (1:2)/Ba/Al • Short-circuit current density (Jsc): 5.18 mA/cm2 • Open-circuit voltage (Voc): 0.95 V • Fill Factor (FF): 0.35 • Power Conversion Efficiency (PCE): 2.24 % |
Orbital Energy | HOMO -5.4 eV |
Packaging | 100 mg in glass insert |
Quality Level | 100 |
Semiconductor Properties | P-type (mobility=3×10−4 cm2 /V·s) |
Transition Temperature | Tm >400 °C |