BBL

Description	Band gap: 1.9 eV
Molecular Formula	(C20H6N4O2)n
Application	Polymer semiconductor with n-type behavior in organic field-effect transistors (FETs) and photovoltaic cells (PVs). Processed from solutions in methanesulfonic acid.
Storage	room temp
Form	ITO/MEH-PPV/BBL/Al[4]• Short-circuit current density (Jsc): 1.98 mA/cm² • Open-circuit voltage (Voc): 0.93 V• Fill Factor (FF): 0.47• Power Conversion Efficiency (PCE): 1.1 %
MDL Number	MFCD08705356
OPV Device Performance	ITO/MEH-PPV/BBL/Al • Short-circuit current density (Jsc): 1.98 mA/cm² • Open-circuit voltage (Voc): 0.93 V • Fill Factor (FF): 0.47 • Power Conversion Efficiency (PCE): 1.1 %
Orbital Energy	HOMO -5.9 eV
Packaging	1 g in glass bottle
Quality Level	100
Semiconductor Properties	N-type (mobility=0.1 cm² /V·s)