| Description | 3000Å Dry Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. |
|---|---|
| Storage | room temp |
| Dimension | 100mm |
| Quality Level | 100 |
| Refractive Index | 1.456 +/-0.02 @ 632.8nm |
| Resistivity | 1-30 Ohm-cm |