100mm Silicon Wafers 1000A Wet Thermal Oxide

Description	This product consist of 100mm silicon wafers with 1000A of Wet thermal Oxide.1 Lot = 25 wafers. Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films.
Storage	room temp
Back Side	Etched
Dimension	100mm
Type/Dopant	P/Boron
Equipment	Horizontal Furnace
Film	Wet Thermal Oxide
Film Stress	-320MPa +/-50MPa (Compressive)
Film Thickness	950Å~1050Å
Film Thickness Tolerance	1000Å+/-5%
Front Side	Polished
Gasses	Oxygen
Orientation	<100>
Quality Level	100
Reaction Temperature	900°C~1050°C
Refractive Index	1.456 +/-0.02 @ 632.8nm
Resistivity	0.003-0.005 Ohm-cm
Sides Pressed	Both
Substrate	Silicon Wafers
Substrate Thickness	525 +/- 25um