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| Description | This product consist of 100mm silicon wafers with 1000A of Wet thermal Oxide.1 Lot = 25 wafers. Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. |
|---|---|
| Storage | room temp |
| Back Side | Etched |
| Dimension | 100mm |
| Type/Dopant | P/Boron |
| Equipment | Horizontal Furnace |
| Film | Wet Thermal Oxide |
| Film Stress | -320MPa +/-50MPa (Compressive) |
| Film Thickness | 950Å~1050Å |
| Film Thickness Tolerance | 1000Å+/-5% |
| Front Side | Polished |
| Gasses | Oxygen |
| Orientation | <100> |
| Quality Level | 100 |
| Reaction Temperature | 900°C~1050°C |
| Refractive Index | 1.456 +/-0.02 @ 632.8nm |
| Resistivity | 0.003-0.005 Ohm-cm |
| Sides Pressed | Both |
| Substrate | Silicon Wafers |
| Substrate Thickness | 525 +/- 25um |
