Zirconium(IV) tert-butoxide

IUPAC Name	2-Methylpropan-2-ol;zirconium
Molecular Weight	387.71
Molecular Formula	C16H40O4Zr
Canonical SMILES	CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.[Zr]
InChI	InChI=1S/4C4H10O.Zr/c41-4(2,3)5;/h45H,1-3H3;
InChI Key	WRMYASGYMABHCC-UHFFFAOYSA-N
Melting Point	3 °C
Flash Point	185 °F
Purity	95%+
Density	0.985 g/mL at 25 °C (lit.)
Appearance	Slightly yellow liquid
Application	Zirconium tert-butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150°C to 300°C, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process.
Storage	2-8 °C
BeilsteinREAXYS Number	3681870
Form	liquid
MDL Number	MFCD00075085
Packaging	25 g in stainless steel cylinder
Quality Level	100