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| Description | insulated wire, 10m, conductor diameter 0.075mm, insulation thickness 0.02mm, PTFE (polytetrafluoroethylene) insulation, 99.9% |
|---|---|
| IUPAC Name | tungsten |
| Molecular Weight | 183.84 |
| Molecular Formula | W |
| Canonical SMILES | [W] |
| InChI | 1S/W,WFKWXMTUELFFGS-UHFFFAOYSA-N |
| InChI Key | WFKWXMTUELFFGS-UHFFFAOYSA-N |
| Boiling Point | 10701 °F at 760 mm Hg (NIOSH, 2016) |
| Melting Point | 3410 °C (lit.) |
| Purity | > 99.99% |
| Density | 19.3 (NIOSH, 2016);18.7-19.3 @ 20 °C/4 °C; depends on extent of working.;19.3 g/cm3;19.3 |
| Solubility | Insoluble (NIOSH, 2016);Sol in mixture of nitric acid and hydrofluoric acid;Solubility in water: none;Insoluble |
| Application | Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition. |
| Storage | room temp |
| Assay | 99.95% trace metals basis |
| Autoignition Temperature | >=100 °C |
| EC Number | 231-143-9 |
| Form | wire |
| MDL Number | MFCD00011461 |
| Packaging | 1 ea in rigid mailer |
| Quality Level | 100 |
| Vapor Pressure | 0 mm Hg (approx) (NIOSH, 2016);1.97X10-7 mm Hg @ 2,327 °C;0 mmHg (approx) |
