Poly(3-hexylthiophene-2,5-diyl)

Description	Poly(3-hexylthiophene-2,5-diyl) (P3HT) is a poly(alkylthiophene) based semiconducting polymer that is hydrophobic at neutral state and has π-π conjugation in its backbone. It has a hole mobility is in the range of 10-3-10-1 cm2V-1s-1 and is commonly used in the development of field-effect transistors (FETs) for a wide range of applications. Poly(3-hexylthiophene) (P3HT) is a regioregular semiconducting polymer. It is used in organic electronics primarily because of its regular end-to-end arrangement of side chain, which allows efficient p- p stacking of the conjugated backbones. On account of the alkyl side group, P3HT is rendered hydrophobic in neutral state. Solution-to-solid phase transformation and thin film formation of poly(3-hexylthiophene) (P3HT) was reported in a study.
Molecular Weight	average Mw 50,000-100,000
Molecular Formula	(C10H14S)n
Melting Point	238 °C
Appearance	Solid
Application	Rechargeable battery electrodes, electrochromic devices, chemical and optical sensors, light-emitting diodes, microelectrical amplifiers, field-effect transistors and non-linear optical materials. For the characterization and solid-state properties of this polymer, see J. Am. Chem. Soc. . P3HT, an electron donor that acts as a semiconducting active layer in combination with an electron acceptor like fullerene derivative (6,6)-phenyl C61-butyric acid methylester (PCBM), can be used to fabricate bulk heterojunction (HJT) based organic solar cells (OSCs). Volatile organic compounds (VOCs)and electric sensor devices can be developed by using Langmuir-Schaefer (LS) films of P3HT and poly(3-octylthiophene)(P3OT). It can also be used with polystyrene to process a nano-scaled polymeric coating through spray coating onto carbon nanotube (CNT) powders. Poly(3-hexylthiophene-2,5-diyl) may be used to fabricate ZnO nanowire arrays based photodiode. Regio- regular poly(3-hexylthiophene-2,5-diyl) may find extensive use as a semiconducting layer in organic thin film field effect transistor (FETs).
Storage	room temp
Fluorescence	λex 420 nm; λem 551 nm in chloroform
Form	ITO/NiO/P3HT/PC61BM/LiF/Al[9]• Short-circuit current density (Jsc): 11.3 mA/cm² • Open-circuit voltage (Voc): 0.64 V• Fill Factor (FF): 0.69• Power Conversion Efficiency (PCE): 5.16 %
MDL Number	MFCD00217686
OPV Device Performance	ITO/NiO/P3HT/PC61BM/LiF/Al • Short-circuit current density (Jsc): 11.3 mA/cm² • Open-circuit voltage (Voc): 0.64 V • Fill Factor (FF): 0.69 • Power Conversion Efficiency (PCE): 5.16 %
Orbital Energy	HOMO 5 eV
Packaging	1 g in glass bottle
Quality Level	100
Semiconductor Properties	P-type (mobility=1E-4-1E-1 cm2/V·s)