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| Description | Resistivity: 75-100 kΩ·cm (Prepared by spin-coating at 1000 rpm/30 s for 1 coat, followed by thermal annealing at 400°C in Ar/H2 for 3 hours) |
|---|---|
| Molecular Formula | MoS2 |
| Appearance | dispersion |
| Application | n-type semiconductor for use in transistors, photodetectors and photovoltaics |
| Storage | Solid Content, 1.5-2.5% |
| Form | dispersion |
| Quality Level | 100 |
| Viscosity | 2-4 mPa.s |
