| Description | 1000Å Dry Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Dry Thermal Oxidation process is designed to ensure that you receive the highest quality films. |
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| Storage | room temp |
| Dimension | 150mm |
| Quality Level | 100 |
| Refractive Index | 1.456 +/-0.02 @ 632.8nm |
| Resistivity | 1-30 Ohm-cm |