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| Description | This product consist of 100mm silicon wafers with 3,000A Dry Chlorinated Thermal Oxide and Forming Gas Anneal. Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using Dry Chlorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions. The addition of a Forming Gas Anneal after oxidation is to passivate dangling bonds. Dangling bonds at the silicon interface can have an effect on the insulating properties of your oxide. |
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| Storage | room temp |
| Dimension | 100mm |
| Quality Level | 100 |
| Resistivity | 0.003-0.005 Ohm-cm |